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Fudan researchers claim single-electron DRAM boosts memory signal

The Guiyi prototype reportedly raises the readout signal to 0.5 volts from tens of millivolts, a claimed tenfold improvement.

Reported · Written up by our desk · China

SCMP Economy reports that a team at Fudan University in Shanghai has developed a proposed DRAM device, called Guiyi, designed to store data using a single electron rather than the large charge reservoirs used in today’s most advanced memory chips.

The outlet says current cutting edge DRAM from companies such as Samsung and SK Hynix relies on roughly 200,000 electrons to keep a stored bit from fading into noise.

According to SCMP Economy, the Guiyi device is designed to lift a faint, fleeting signal from tens of millivolts to a more robust 0.5 volts, which it characterizes as a tenfold improvement over earlier single electron attempts.

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